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| SID300N12 NPT IGBT Modules Dimensions in mm (1mm = 0.0394") Absolute Maximum Ratings Symbol IGBT VCES IC ICRM VGES TVj,(Tstg) Conditions TC = 25oC, unless otherwise specified Values 1200 Units V A A V o TC= 25(80) C TC= 25(80)oC, tP =1ms _ TOPERATION < Tstg o 300(220) 600(440) _ +20 _ 40...+150(125) 2500 260(180) 600(440) 2200 350(230) 600(440) 2900 C AC, 1min Visol Inverse Diode IF = -IC IFRM V A A A A A A TC= 25(80)oC TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC Freewheeling diode TC= 25(80)oC IF = -IC IFRM TC= 25(80)oC, tP =1ms IFSM tP =10ms; sin.;Tj=150oC SID300N12 NPT IGBT Modules Characteristics Symbol IGBT VGE(th) ICES VCE(TO) rCE VCE(sat) Cies Coes Cres LCE RCC'+EE' Conditions VGE = VCE, IC =6mA VGE = 0; VCE = VCES; Tj = 25(125)oC Tj = 25(125)oC VGE = 15V, Tj = 25(125)oC IC =150A; VGE = 15V; chip level under following conditions VGE = 0, VCE = 25V, f = 1MHz TC = 25oC, unless otherwise specified min. 4.5 typ. 5.5 0.1 1.4(1.6) 5.5(7.5) 2.5(3.1) 18 2.5 1 0.35(0.5) 250 90 550 70 28(26) 2(1.8) 1.1 3 70(105) 10(26) 400 160 700 100 max. 6.5 0.3 1.6(1.8) 7(9.5) 3(3.7) 24 3.2 1.3 20 Units V mA V m V nF nH m ns ns ns ns mJ V V m A uC mJ V V m A uC mJ K/W K/W K/W K/W Nm Nm g td(on) tr td(off) tf Eon(Eoff) Inverse Diode under following conditions: VF = VEC IF = 200A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 200A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V FWD under following conditions: VF = VEC IF = 100A; VGE = 0V; Tj = 25(125)oC V(TO) Tj = 125oC rT Tj = 125oC IRRM IF = 200A; Tj = 25(125)oC Qrr di/dt = A/us Err VGE = V Thermal Characteristics Rth(j-c) per IGBT Rth(j-c)D per Inverse Diode Rth(j-c)FD per FWD Rth(c-s) per module Mechanical Data Ms to heatsink M6 Mt to terminals M6 w res., terminal-chip TC = 25(125)oC under following conditions: VCC = 600V, IC = 150A RGon = RGoff =4.7 , Tj = 125oC VGE = 15V 2.5 1.2 5.5 1.9(1.7) 3 80(140) 10(34) 2.4 1.2 3.5 0.075 0.18 0.15 0.038 3 2.5 5 5 325 |
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